document number: 93526 for technical questions, contact: ind-modules@vishay.com www.vishay.com revision: 20-may-09 1 standard recovery diodes, generation 2 do-5 (stud version), 80 a 80pf(r)...(w) series vishay high power products features ? high surge current capability ? designed for a wide range of applications ? stud cathode and stud anode version ? wire version available ? low thermal resistance ? ul approval pending ? compliant to rohs directive 2002/95/ec ? designed and qualified for multiple level typical applications ? battery chargers ? converters ? power supplies ? machine tool controls ? welding electrical specifications product summary i f(av) 80 a 8 0pf(r)... 8 0pf(r)...w do-203ab (do-5) do-203ab (do-5) major ratings and characteristics parameter test conditions values units i f(av) 80 a t c 140 c i f(rms) 126 a i fsm 50 hz 1500 a 60 hz 1570 i 2 t 50 hz 11 250 a 2 s 60 hz 10 230 v rrm range 400 to 1200 v t j - 55 to 180 c voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm maximum at t j = 150 c ma 80pf(r)...(w) 40 400 500 9 80 800 960 120 1200 1440
www.vishay.com for technical questions, contact: ind-modules@vishay.com document number: 93526 2 revision: 20-may-09 80pf(r)...(w) series vishay high power products standard recovery diodes, generation 2 do-5 (stud version), 80 a notes (1) recommended for pass-through holes (2) torque must be appliable only to hexagon and not to plastic structure, recommended for holed heatsink forward conduction parameter symbol test conditions values units maximum average forward current at case temperature i f(av) 180 conduction, half sine wave 80 a 140 c maximum rms forward current i f(rms) 126 a maximum peak, one-cycle forward, non-repetitive surge current i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = 150 c 1500 a t = 8.3 ms 1570 t = 10 ms 100 % v rrm reapplied 1260 t = 8.3 ms 1320 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 11 250 a 2 s t = 8.3 ms 10 230 t = 10 ms 100 % v rrm reapplied 7950 t = 8.3 ms 7200 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no voltage reapplied 112 500 a 2 s low level value of threshold voltage v f(to) (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 0.73 v low level value of forward slope resistance r f (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 3.0 m maximum forward voltage drop v fm i pk = 220 a, t j = 25 c, t p = 400 s rectangular wave 1.40 v thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating and storage temperature range t j , t stg - 55 to 180 c maximum thermal resistance, junction to case r thjc dc operation 0.30 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.25 maximum allowable mounting torque (+ 0 %, - 10 %) not lubricated thread, tighting on nut (1) 3.4 (30) n m (lbf in) lubricated thread, tighting on nut (1) 2.3 (20) not lubricated thread, tighting on hexagon (2) 4.2 (37) lubricated thread, tighting on hexagon (2) 3.2 (28) approximate weight 15.8 g 0.56 oz. case style see dimensions - link at the end of datasheet do-203ab (do-5)
document number: 93526 for technical questions, contact: ind-modules@vishay.com www.vishay.com revision: 20-may-09 3 80pf(r)...(w) series standard recovery diodes, generation 2 do-5 (stud version), 80 a vishay high power products note ? the table above shows the increment of thermal resistance r thjc when devices operate at diffe rent conduction angles than dc fig. 1 - current ratings characteristics f ig. 2 - current ratings characteristics fig. 3 - forward powe r loss characteristics r thjc conduction conduction angle sinusoidal conduction rect angular conduction test conditions units 180 0.14 0.10 t j = t j maximum k/w 120 0.16 0.17 90 0.21 0.22 60 0.30 0.31 30 0.50 0.50 average forward current (a) maximum allowable case temperature (c) 110 120 130 140 150 160 170 180 0 102030405060708090 30 60 90 120 180 conduction angle 80pf(r) series rthjc = 0.3 k/w average forward current (a) maximum allowable case temperature (c) 120 130 140 150 160 170 180 0 20406080100120140 dc 30 60 90 120 180 conduction period 80pf(r) series rthjc (dc) = 0.3 k/w average forward current (a) maximum allowable forward power loss (w) maximum allowable ambient temperature (c) 0 30 60 90 120 150 180 2 k/w 1.5 k/w 1 k/w 5 k/w 3 k/w 0.3 k/w 0.5 k/w 0.7 k/w 0 20 40 60 80 100 120 140 0 1020304050607080 conduction angle 180 120 90 60 30 rms limit 80pf(r) series tj = 180c
www.vishay.com for technical questions, contact: ind-modules@vishay.com document number: 93526 4 revision: 20-may-09 80pf(r)...(w) series vishay high power products standard recovery diodes, generation 2 do-5 (stud version), 80 a fig. 4 - forward power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - forward voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics average forward current (a) maximum allowable forward power loss (w) maximum allowable ambient temperature (c) 0 30 60 90 120 150 180 2 k/w 1.5 k/w 1 k/w 5 k/w 3 k/w 0.3 k/w 0.5 k/w 0.7 k/w 0 20 40 60 80 100 120 140 0 2040608010012014 0 dc 180 120 90 60 30 rms limit conduction period 80pf(r) series tj = 180c number of equal amplitude half cycle current pulses (n) peak haf sine wave forward current (a) 400 500 600 700 800 900 1000 1100 1200 1300 1400 11010 0 at any rated load condition and with rated vrrm applied following surge. 80pf(r) series initial tj = 150c @ 60 hz 0.0083 s @ 50 hz 0.0100 s pulse train duration (s) peak haf sine wave forward current (a) 200 400 600 800 1000 1200 1400 1600 0.01 0.1 1 maximum non repetitive surge current versus pulse train duration. 80pf(r) series initial tj = 150c no voltage reapplied rated vrrm reapplied instantaneous forward voltage (v) instantaneous forward current (a) 1 10 100 1000 0123 tj = 25c tj = 180c 80pf(r) series square wave pulse duration (s) transient thermal impedance z thjc (k/w) 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 steady state value rthjc = 0.3 k/w (dc operation) 80pf(r) series
document number: 93526 for technical questions, contact: ind-modules@vishay.com www.vishay.com revision: 20-may-09 5 80pf(r)...(w) series standard recovery diodes, generation 2 do-5 (stud version), 80 a vishay high power products ordering information table device code 5 13 24 80 pf r 120 w 1 - 80 = standard device 82 = isolated lead on standard terminal with silicone sleeve available for 1200 v only (red = reverse polarity) (blue = normal polarity) 2 - pf = plastic package 3 - none = stud normal polarity (cathode to stud) r = stud reverse polarity (anode to stud) 4 - voltage code x 10 = v rrm (see voltage ratings table) 5 - none = standard terminal (see dimensions for 80pf(r)... - link at the end of datasheet) w = wire terminal (see dimensions for 80pf(r)...w - link at the end of datasheet) links to related documents dimensions www.vishay.com/doc?95345
document number: 95345 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 26-aug-08 1 do-203ab (do-5) fo r 50pf(r)...(w), 80pf(r)...(w) and 95pf(r)...(w) series outline dimensions vishay semiconductors dimensions for 80pf(r), 50pf(r) and 95pf(r) series in millimeters note ? for metric device please contact factory ? 15.6 max. ? 16.8 max. 18.9 + 0.1 0.0 3.5 min. 2.4 ref. 4 min. 4.2 max. 6.45 min. for metric devices: m6 x 1 ? 3 plastic cap. 1.2 max. 11 0.4 11.45 max. 1/4"28-unf-2a 17.25 max. 25.4 max.
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 95345 2 revision: 26-aug-08 outline dimensions vishay semiconductors do-203ab (do-5) for 50pf(r)...(w), 80pf(r)...(w) and 95p f(r)...(w) series dimensions for 80pf(r)...(w), 50pf (r)...(w) and 95pf(r)...(w) series in millimeters note ? for metric device please contact factory ? 15.6 max. ? 16.8 max. 18.9 + 0.1 0.0 2.4 ref. for metric devices: m6 x 1 2.05 max. plastic cap. 17.25 max. 1/4"-28-unf-2a 11 0.4 11.45 max. 25.4 max.
document number: 95345 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 26-aug-08 3 outline dimensions do-203ab (do-5) for 50pf(r)...(w), 80pf(r)...(w) and 95pf(r)...(w) series vishay semiconductors dimensions for 52pf(r), 82pf(r) and 97pf(r) series in millimeters note ? for metric device please contact factory 2.4 ref. for metric devices: m6 x 1 6.6 mm 2 external lead with blue or red sleeve insulation ? 7 max. 12.2 max. plastic cap. 1/4"-28-unf-2a 11 0.4 11.45 max. 123 134.4
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